? 2004 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 1000 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c30a i dm t c = 25 c, pulse width limited by t jm 120 a i ar t c = 25 c30a e ar t c = 25 c60mj e as t c = 25 c 4.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 735 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque to-264 0.9/6 nm/lb.in. weight plus-247 6 g to-264 10 g hiperfet tm power mosfets q-class n-channel enhancement mode avalanche rated, high dv/dt, low q g low intrinsic r g , low t rr features z double metal process for low gate resistance z international standard packages z epoxy meet ul 94 v-0, flammability classification z avalanche energy and current rated z fast intrinsic rectifier advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 1000 v v gs(th) v ds = v gs , i d = 8 ma 2.5 5.0 v i gss v gs = 30 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c50 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 0.40 ? pulse test, t 300 s, duty cycle d 2 % g = gate d = drain s = source tab = drain ds99160(4/04) to-264 aa (ixfk) s g d d (tab) v dss = 1000 v i d25 = 30 a r ds(on) = 0.40 ? ? ? ? ? t rr 300 ns ixfk 30n100q2 ixfx 30n100q2 plus 247 tm (ixfx) g d d (tab) preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 15 v; i d = 0.5 ? i d25 , pulse test 20 30 s c iss 8200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 760 pf c rss 140 pf t d(on) 22 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 14 ns t d(off) r g = 1.0 ? (external), 60 ns t f 10 ns q g(on) 186 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 46 nc q gd 82 nc r thjc 0.17 k/w r thck to-264 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 30 a i sm repetitive; pulse width limited by t jm 120 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm 1 c i rm 1 0 a i f = 25a, -di/dt = 100 a/ s, v r = 100 v to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. ixfk 30n100q2 ixfx 30n100q2 dim. mi llimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm outline
? 2004 ixys all rights reserved ixfk 30n100q2 ixfx 30n100q2 fig. 2. extended output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 45 50 55 60 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 7v 5v 6v 5.5v 6.5v fig. 3. output characteristics @ 125 o c 0 3 6 9 12 15 18 21 24 27 30 0 3 6 9 12 15 18 21 24 27 v d s - volts i d - amperes v gs = 10v 7v 6v 5v 5.5v 4.5v fig. 1. output characteristics @ 25 o c 0 3 6 9 12 15 18 21 24 27 30 0123456 789101112 v d s - volts i d - amperes v gs = 10v 7v 6.5v 5v 6v 5.5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 30a i d = 15a v gs = 10v fig. 6. drain current vs. case temperature 0 3 6 9 12 15 18 21 24 27 30 33 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 0 5 10 15 20 25 30 35 40 45 50 55 60 i d - amperes r d s ( o n ) - normalize d t j = 125oc t j = 25oc v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344 ixfk 30n100q2 ixfx 30n100q2 fig. 11. capacitance 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v g s - volts v ds = 500v i d = 15a i g = 10ma fig. 7. input adm ittance 0 5 10 15 20 25 30 35 40 3.5 4 4.5 5 5.5 6 6.5 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 25 30 35 40 45 50 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 80 90 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. maxim um transient therm al resistance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - o c / w
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